Millimeter-wave bandwidth, SiGe-HBT travelling wave amplifier

Millimeter-wave bandwidth, SiGe-HBT travelling wave amplifier

One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufactured in Hitachi's 100-GHz SiGe-HBT technology. Measurements show that the circuits exhibit a bandwidth of about 67 GHz with 6 dB of gain. The circuit is operational at 3.3 V supply voltage consuming...

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Bibliographische Detailangaben
Hauptverfasser: Kerzar, B., Mokhtari, M., Yinggang Li, Hansson, B., Washio, K., Harada, T., Lewin, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Circuit simulation
Frequency
Gain
Integrated circuit interconnections
Isolation technology
Millimeter wave communication
Millimeter wave technology
Optical amplifiers
Voltage
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Beschreibung
Zusammenfassung:One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufactured in Hitachi's 100-GHz SiGe-HBT technology. Measurements show that the circuits exhibit a bandwidth of about 67 GHz with 6 dB of gain. The circuit is operational at 3.3 V supply voltage consuming 23 mA current. The chip area is approximately 1/spl times/1 mm/sup 2/.
ISSN:1064-7775
2379-5638
DOI:10.1109/GAAS.2000.906290