Experimental Extraction of Impact of Depletion Capacitance on Low Frequency Noise in Sub-Micron nMOSFETs With Reverse Body Bias

In this study, we investigate low frequency noise under the reverse body bias conditions from sub-threshold to moderate inversion regime, in order to experimentally extract the impact of depletion capacitance with the reverse body bias. From 1/ {f} noise measurement for small-area conventional {n}...

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Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2020-05, Vol.33 (2), p.146-149
Hauptverfasser:	Tanaka, Chika, Adachi, Kanna, Nakayama, Atsushi, Iguchi, Yasuhiko, Yoshitomi, Sadayuki
Format:	Artikel
Sprache:	eng
Schlagworte:	1/<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">f noise <italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">n MOSFETs Capacitance Current measurement Logic gates Low frequency noise MOSFET Noise measurement reverse body bias Semiconductor device measurement signal-to-noise ratio Voltage measurement
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