Experimental Extraction of Impact of Depletion Capacitance on Low Frequency Noise in Sub-Micron nMOSFETs With Reverse Body Bias

In this study, we investigate low frequency noise under the reverse body bias conditions from sub-threshold to moderate inversion regime, in order to experimentally extract the impact of depletion capacitance with the reverse body bias. From 1/ {f} noise measurement for small-area conventional {n} MOSFETs, the reverse body bias is not influenced on the coulomb scattering process, even though the depletion capacitance was influenced by body bias. Furthermore, small gate-to-bulk coupling with smaller depletion capacitance caused by reverse body bias reduced Random Telegraph Noise as well as flat-band fluctuations of gate voltage noise spectral density. These results suggest that reverse body bias is applicable to the low power and high signal-to-noise ratio for low current operation.