An On-Chip Micromachined Test Structure to Study the Tribological Behavior of Deep-RIE MEMS Sidewall Surfaces

An on-chip micro-mechanical test structure is presented to investigate the tribological behavior of deep reactive ion etching (DRIE) sidewall surfaces of microelectromechanical systems (MEMS) devices. The proposed test structure is fabricated on silicon on insulator (SOI) wafer using a standard surface micromachine process. Test structure consists of two orthogonally placed electrostatic comb-drive actuators, one is used to align a contact with the friction surfaces under a certain normal load, and another one is used to generate the tangential motion on contacted sidewall surfaces. To assess the frictional behavior of DRIE sidewall surfaces, both static and dynamic friction coefficients were studied for different DRIE process parameters. Wear analysis was carried out to extract the performance and reliability of MEMS sidewall surfaces during their operation. From the experiment results, it is found that with the increment of normal load, the static friction coefficient exhibits a nonlinear dependence, and however, it has less effect on the dynamic friction coefficient. DRIE process parameters have a significant influence on static and dynamic friction coefficients, i.e., variation in asperity size changes the real contact area between the contact pairs during their operation. From the wear analysis, it is found that the friction coefficient was very high initial value, then it drops with each subsequent cycle for a few cycles and finally reaches steady-state value.