RF-distortion in deep-submicron CMOS technologies

The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	van Langevelde, R., Tiemeijer, L.F., Havens, R.J., Knitel, M.J., Ores, R.F.M., Woerlee, P.H., Klaassen, D.B.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Distortion measurement Doping Laboratories Linearity MOSFETs Radio frequency Semiconductor device modeling Semiconductor process modeling Voltage
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