RF-distortion in deep-submicron CMOS technologies

RF-distortion in deep-submicron CMOS technologies

The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology...

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Hauptverfasser: van Langevelde, R., Tiemeijer, L.F., Havens, R.J., Knitel, M.J., Ores, R.F.M., Woerlee, P.H., Klaassen, D.B.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Distortion measurement
Doping
Laboratories
Linearity
MOSFETs
Radio frequency
Semiconductor device modeling
Semiconductor process modeling
Voltage
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Beschreibung
Zusammenfassung:The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18 /spl mu/m is verified and further scaling according to the ITRS-roadmap is predicted.
DOI:10.1109/IEDM.2000.904440