RF-distortion in deep-submicron CMOS technologies
The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology...
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| creator | van Langevelde, R. Tiemeijer, L.F. Havens, R.J. Knitel, M.J. Ores, R.F.M. Woerlee, P.H. Klaassen, D.B.M. |
| description | The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18 /spl mu/m is verified and further scaling according to the ITRS-roadmap is predicted. |
| doi_str_mv | 10.1109/IEDM.2000.904440 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_904440</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>904440</ieee_id><sourcerecordid>904440</sourcerecordid><originalsourceid>FETCH-LOGICAL-c151t-cf81ab874b0ed8c0ecae3b7391e582b52c39eb496297dbca5122e48bad22454d3</originalsourceid><addsrcrecordid>eNotj1tLAzEUhAMiKHXfxaf9A1lPkpMmeZS11UJLwctzyeVUI-1u2awP_nsXWhgYmA-GGcbuBTRCgHtcLZ43jQSAxgEiwhWrnLEwSc1RWXPDqlJ-Jg6o0Up9y8Tbkqdcxn4Yc9_VuasT0YmX33DMcZiSdrN9r0eK311_6L8ylTt2vfeHQtXFZ-xzufhoX_l6-7Jqn9Y8Ci1GHvdW-GANBqBkI1D0pIJRTpC2MmgZlaOAbi6dSSF6LaQktMEnKadxSc3Yw7k3E9HuNOSjH_5251_qHyNbQmU</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>RF-distortion in deep-submicron CMOS technologies</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>van Langevelde, R. ; Tiemeijer, L.F. ; Havens, R.J. ; Knitel, M.J. ; Ores, R.F.M. ; Woerlee, P.H. ; Klaassen, D.B.M.</creator><creatorcontrib>van Langevelde, R. ; Tiemeijer, L.F. ; Havens, R.J. ; Knitel, M.J. ; Ores, R.F.M. ; Woerlee, P.H. ; Klaassen, D.B.M.</creatorcontrib><description>The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18 /spl mu/m is verified and further scaling according to the ITRS-roadmap is predicted.</description><identifier>ISBN: 9780780364387</identifier><identifier>ISBN: 0780364384</identifier><identifier>DOI: 10.1109/IEDM.2000.904440</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS technology ; Distortion measurement ; Doping ; Laboratories ; Linearity ; MOSFETs ; Radio frequency ; Semiconductor device modeling ; Semiconductor process modeling ; Voltage</subject><ispartof>International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.807-810</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c151t-cf81ab874b0ed8c0ecae3b7391e582b52c39eb496297dbca5122e48bad22454d3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/904440$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/904440$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>van Langevelde, R.</creatorcontrib><creatorcontrib>Tiemeijer, L.F.</creatorcontrib><creatorcontrib>Havens, R.J.</creatorcontrib><creatorcontrib>Knitel, M.J.</creatorcontrib><creatorcontrib>Ores, R.F.M.</creatorcontrib><creatorcontrib>Woerlee, P.H.</creatorcontrib><creatorcontrib>Klaassen, D.B.M.</creatorcontrib><title>RF-distortion in deep-submicron CMOS technologies</title><title>International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)</title><addtitle>IEDM</addtitle><description>The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18 /spl mu/m is verified and further scaling according to the ITRS-roadmap is predicted.</description><subject>CMOS technology</subject><subject>Distortion measurement</subject><subject>Doping</subject><subject>Laboratories</subject><subject>Linearity</subject><subject>MOSFETs</subject><subject>Radio frequency</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor process modeling</subject><subject>Voltage</subject><isbn>9780780364387</isbn><isbn>0780364384</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj1tLAzEUhAMiKHXfxaf9A1lPkpMmeZS11UJLwctzyeVUI-1u2awP_nsXWhgYmA-GGcbuBTRCgHtcLZ43jQSAxgEiwhWrnLEwSc1RWXPDqlJ-Jg6o0Up9y8Tbkqdcxn4Yc9_VuasT0YmX33DMcZiSdrN9r0eK311_6L8ylTt2vfeHQtXFZ-xzufhoX_l6-7Jqn9Y8Ci1GHvdW-GANBqBkI1D0pIJRTpC2MmgZlaOAbi6dSSF6LaQktMEnKadxSc3Yw7k3E9HuNOSjH_5251_qHyNbQmU</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>van Langevelde, R.</creator><creator>Tiemeijer, L.F.</creator><creator>Havens, R.J.</creator><creator>Knitel, M.J.</creator><creator>Ores, R.F.M.</creator><creator>Woerlee, P.H.</creator><creator>Klaassen, D.B.M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>RF-distortion in deep-submicron CMOS technologies</title><author>van Langevelde, R. ; Tiemeijer, L.F. ; Havens, R.J. ; Knitel, M.J. ; Ores, R.F.M. ; Woerlee, P.H. ; Klaassen, D.B.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c151t-cf81ab874b0ed8c0ecae3b7391e582b52c39eb496297dbca5122e48bad22454d3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>CMOS technology</topic><topic>Distortion measurement</topic><topic>Doping</topic><topic>Laboratories</topic><topic>Linearity</topic><topic>MOSFETs</topic><topic>Radio frequency</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor process modeling</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>van Langevelde, R.</creatorcontrib><creatorcontrib>Tiemeijer, L.F.</creatorcontrib><creatorcontrib>Havens, R.J.</creatorcontrib><creatorcontrib>Knitel, M.J.</creatorcontrib><creatorcontrib>Ores, R.F.M.</creatorcontrib><creatorcontrib>Woerlee, P.H.</creatorcontrib><creatorcontrib>Klaassen, D.B.M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>van Langevelde, R.</au><au>Tiemeijer, L.F.</au><au>Havens, R.J.</au><au>Knitel, M.J.</au><au>Ores, R.F.M.</au><au>Woerlee, P.H.</au><au>Klaassen, D.B.M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>RF-distortion in deep-submicron CMOS technologies</atitle><btitle>International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)</btitle><stitle>IEDM</stitle><date>2000</date><risdate>2000</risdate><spage>807</spage><epage>810</epage><pages>807-810</pages><isbn>9780780364387</isbn><isbn>0780364384</isbn><abstract>The distortion behaviour of MOSFETs is important for RF-applications. In this paper the influence of technology variations (oxide thickness, substrate doping,...) on distortion is investigated using measurements and a recently developed compact MOSFET model. The influence on distortion of technology scaling down to 0.18 /spl mu/m is verified and further scaling according to the ITRS-roadmap is predicted.</abstract><pub>IEEE</pub><doi>10.1109/IEDM.2000.904440</doi><tpages>4</tpages></addata></record> |
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| ispartof | International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.807-810 |
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| language | eng |
| recordid | cdi_ieee_primary_904440 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | CMOS technology Distortion measurement Doping Laboratories Linearity MOSFETs Radio frequency Semiconductor device modeling Semiconductor process modeling Voltage |
| title | RF-distortion in deep-submicron CMOS technologies |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T19%3A53%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=RF-distortion%20in%20deep-submicron%20CMOS%20technologies&rft.btitle=International%20Electron%20Devices%20Meeting%202000.%20Technical%20Digest.%20IEDM%20(Cat.%20No.00CH37138)&rft.au=van%20Langevelde,%20R.&rft.date=2000&rft.spage=807&rft.epage=810&rft.pages=807-810&rft.isbn=9780780364387&rft.isbn_list=0780364384&rft_id=info:doi/10.1109/IEDM.2000.904440&rft_dat=%3Cieee_6IE%3E904440%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=904440&rfr_iscdi=true |