High-density (4.4F/sup 2/) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

This paper describes a novel high-density 4.4F/sup 2/ (F: feature size) NAND flash memory with the cell size of 0.074 um/sup 2/ for 0.13 um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel...

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Hauptverfasser:	Arai, F., Arai, N., Satoh, S., Yaegashi, T., Kamiya, E., Matsunaga, Y., Takeuchi, Y., Kamata, H., Shimizu, A., Ohtami, N., Kai, N., Takahashi, S., Moriyama, W., Kugimiya, K., Miyazaki, S., Hirose, T., Meguro, H., Hatakeyama, K., Shimizu, K., Shirota, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Ambient intelligence Costs Design engineering Flash memory Isolation technology Large scale integration Manufacturing processes Microelectronics Pulp manufacturing Semiconductor device manufacture
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Zusammenfassung:	This paper describes a novel high-density 4.4F/sup 2/ (F: feature size) NAND flash memory with the cell size of 0.074 um/sup 2/ for 0.13 um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F/sup 2/ NAND flash technology is highly advantageous for low cost flash memories of 4 Gbit and beyond for mass storage applications.
DOI:	10.1109/IEDM.2000.904432