A notched metal gate MOSFET for sub-0.1 /spl mu/m operation

A notched metal gate MOSFET for sub-0.1 /spl mu/m operation

We demonstrate a notched W/TiN gate MOSFET for which both threshold voltage adjustment and suppression of the short channel effect are achieved simultaneously. To lower the threshold voltage, low channel doping concentration and high dose-low energy counter-doping are combined with high-dose tilted...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Pidin, S., Mushiga, M., Shido, H., Yamamoto, T., Sambonsugi, Y., Tamura, Y., Sugii, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Implants
MOSFET circuits
Threshold voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We demonstrate a notched W/TiN gate MOSFET for which both threshold voltage adjustment and suppression of the short channel effect are achieved simultaneously. To lower the threshold voltage, low channel doping concentration and high dose-low energy counter-doping are combined with high-dose tilted pocket implant performed using notched gate. Due to presence of notches, near optimal pocket implant distribution in the channel is achieved.
DOI:10.1109/IEDM.2000.904405