A 180-nm X-Band Cryogenic CMOS LNA

This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S_{11} and S_{22} below −10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of th...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2020-04, Vol.30 (4), p.395-398
Hauptverfasser:	Caglar, Alican, Yelten, Mustafa Berke
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS CMOS technology Complementary metal–oxide–semiconductor (CMOS) Cryoforming Cryogenics Inductors Linearity low-noise amplifier (LNA) Noise Noise levels Noise measurement Noise temperature Transmission line measurements Voltage gain
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