A 180-nm X-Band Cryogenic CMOS LNA
This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S_{11} and S_{22} below −10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of th...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2020-04, Vol.30 (4), p.395-398 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Caglar, Alican Yelten, Mustafa Berke |
| description | This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) X -band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides S_{11} and S_{22} below −10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as −1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and −3 dBm IIP3. The presented work is the first implemented X -band cryogenic CMOS LNA in the literature. |
| doi_str_mv | 10.1109/LMWC.2020.2979341 |
| format | Article |
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The designed LNA provides <inline-formula> <tex-math notation="LaTeX">S_{11} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">S_{22} </tex-math></inline-formula> below −10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as −1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and −3 dBm IIP3. The presented work is the first implemented <inline-formula> <tex-math notation="LaTeX">X </tex-math></inline-formula>-band cryogenic CMOS LNA in the literature.]]></description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2020.2979341</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>CMOS ; CMOS technology ; Complementary metal–oxide–semiconductor (CMOS) ; Cryoforming ; Cryogenics ; Inductors ; Linearity ; low-noise amplifier (LNA) ; Noise ; Noise levels ; Noise measurement ; Noise temperature ; Transmission line measurements ; Voltage gain</subject><ispartof>IEEE microwave and wireless components letters, 2020-04, Vol.30 (4), p.395-398</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-e5df4acf30263392e2c4280e22a11d5ba38d2ccd926a500db9d583dfc0315fb33</citedby><cites>FETCH-LOGICAL-c293t-e5df4acf30263392e2c4280e22a11d5ba38d2ccd926a500db9d583dfc0315fb33</cites><orcidid>0000-0002-9257-3441 ; 0000-0001-7482-0536</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9043508$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9043508$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Caglar, Alican</creatorcontrib><creatorcontrib>Yelten, Mustafa Berke</creatorcontrib><title>A 180-nm X-Band Cryogenic CMOS LNA</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description><![CDATA[This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) <inline-formula> <tex-math notation="LaTeX">X </tex-math></inline-formula>-band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides <inline-formula> <tex-math notation="LaTeX">S_{11} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">S_{22} </tex-math></inline-formula> below −10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as −1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and −3 dBm IIP3. The presented work is the first implemented <inline-formula> <tex-math notation="LaTeX">X </tex-math></inline-formula>-band cryogenic CMOS LNA in the literature.]]></description><subject>CMOS</subject><subject>CMOS technology</subject><subject>Complementary metal–oxide–semiconductor (CMOS)</subject><subject>Cryoforming</subject><subject>Cryogenics</subject><subject>Inductors</subject><subject>Linearity</subject><subject>low-noise amplifier (LNA)</subject><subject>Noise</subject><subject>Noise levels</subject><subject>Noise measurement</subject><subject>Noise temperature</subject><subject>Transmission line measurements</subject><subject>Voltage gain</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kMtOwzAQRS0EEqXwAYhNBGuXGY_d2ssSlYeU0gUg2Fmu7aBWNClOu-jfkygVq7mLc-9Ih7FrhBEimPti_pmPBAgYCTMxJPGEDVApzXEylqddJuRIYM7ZRdOsAVBqiQN2O81QA6822Rd_cFXI8nSov2O18lk-X7xlxev0kp2V7qeJV8c7ZB-Ps_f8mReLp5d8WnAvDO14VKGUzpcEYkxkRBReCg1RCIcY1NKRDsL7YMTYKYCwNEFpCqUHQlUuiYbsrt_dpvp3H5udXdf7VLUvrSCtEZAMtBT2lE9106RY2m1abVw6WATbqbCdCtupsEcVbeem76xijP-8AUkKNP0BnRNVxQ</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Caglar, Alican</creator><creator>Yelten, Mustafa Berke</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-9257-3441</orcidid><orcidid>https://orcid.org/0000-0001-7482-0536</orcidid></search><sort><creationdate>20200401</creationdate><title>A 180-nm X-Band Cryogenic CMOS LNA</title><author>Caglar, Alican ; Yelten, Mustafa Berke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-e5df4acf30263392e2c4280e22a11d5ba38d2ccd926a500db9d583dfc0315fb33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>CMOS</topic><topic>CMOS technology</topic><topic>Complementary metal–oxide–semiconductor (CMOS)</topic><topic>Cryoforming</topic><topic>Cryogenics</topic><topic>Inductors</topic><topic>Linearity</topic><topic>low-noise amplifier (LNA)</topic><topic>Noise</topic><topic>Noise levels</topic><topic>Noise measurement</topic><topic>Noise temperature</topic><topic>Transmission line measurements</topic><topic>Voltage gain</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Caglar, Alican</creatorcontrib><creatorcontrib>Yelten, Mustafa Berke</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Caglar, Alican</au><au>Yelten, Mustafa Berke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 180-nm X-Band Cryogenic CMOS LNA</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>30</volume><issue>4</issue><spage>395</spage><epage>398</epage><pages>395-398</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract><![CDATA[This letter presents the measurement results of a 180-nm complementary metal-oxide-semiconductor (CMOS) <inline-formula> <tex-math notation="LaTeX">X </tex-math></inline-formula>-band low-noise amplifier (LNA) at both 77 and 300 K. The designed LNA provides <inline-formula> <tex-math notation="LaTeX">S_{11} </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">S_{22} </tex-math></inline-formula> below −10 dB at both temperatures within 6.4-7.4 GHz band. At 300 K, the voltage gain of the designed LNA is higher than 12.5 dB, and it provides an average noise temperature of 275 K, as well as −1 dBm IIP3. At 77 K, the LNA has approximately an 18-dB voltage gain, 78-K noise figure (NF), and −3 dBm IIP3. The presented work is the first implemented <inline-formula> <tex-math notation="LaTeX">X </tex-math></inline-formula>-band cryogenic CMOS LNA in the literature.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LMWC.2020.2979341</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-9257-3441</orcidid><orcidid>https://orcid.org/0000-0001-7482-0536</orcidid></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2020-04, Vol.30 (4), p.395-398 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | CMOS CMOS technology Complementary metal–oxide–semiconductor (CMOS) Cryoforming Cryogenics Inductors Linearity low-noise amplifier (LNA) Noise Noise levels Noise measurement Noise temperature Transmission line measurements Voltage gain |
| title | A 180-nm X-Band Cryogenic CMOS LNA |
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