Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies
High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have been integrated in a dual-inlaid Cu-based backend for...
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| creator | Zurcher, P. Alluri, P. Chu, P. Duvallet, A. Happ, C. Henderson, R. Mendonca, J. Kim, M. Petras, M. Raymond, M. Remmel, T. Roberts, D. Steimle, B. Stipanuk, J. Straub, S. Sparks, T. Tarabbia, M. Thibieroz, H. Miller, M. |
| description | High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have been integrated in a dual-inlaid Cu-based backend for mixed-signal applications. These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices. |
| doi_str_mv | 10.1109/IEDM.2000.904281 |
| format | Conference Proceeding |
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These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices.</description><identifier>ISBN: 9780780364387</identifier><identifier>ISBN: 0780364384</identifier><identifier>DOI: 10.1109/IEDM.2000.904281</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Conductivity ; Copper ; Linearity ; Metal-insulator structures ; MIM capacitors ; Noise reduction ; Resistors ; Temperature ; Transistors</subject><ispartof>International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. 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These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices.</description><subject>Capacitance</subject><subject>Conductivity</subject><subject>Copper</subject><subject>Linearity</subject><subject>Metal-insulator structures</subject><subject>MIM capacitors</subject><subject>Noise reduction</subject><subject>Resistors</subject><subject>Temperature</subject><subject>Transistors</subject><isbn>9780780364387</isbn><isbn>0780364384</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUF9LwzAcDIigzL6LT_kCrUnTJumj1s0VVgb-eR5p88sWaZuSBEE_vWMVDu6O4-7hELqnJKOUVI_N-qXNckJIVpEil_QKJZWQ5AzGCybFDUpC-DrnpCgLmZe36LuZIhy9itZN2BkcT3bCxg4jbpsW92pWvY3OB6wmjT0EGy7OTtHh3s0zeDxCVMNgf5eNTgXQ-G2T1u3-_dJ6touO0J8mN7ijhXCHro0aAiT_vEKfm_VHvU13-9emftqlloo8plUFXDBJeV5QwXQHRvOyA0a4ED1oyXnHtJEKCJXMSN4JQjtiSlGIUmjN2Ao9LLsWAA6zt6PyP4flHPYHRkZaZw</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Zurcher, P.</creator><creator>Alluri, P.</creator><creator>Chu, P.</creator><creator>Duvallet, A.</creator><creator>Happ, C.</creator><creator>Henderson, R.</creator><creator>Mendonca, J.</creator><creator>Kim, M.</creator><creator>Petras, M.</creator><creator>Raymond, M.</creator><creator>Remmel, T.</creator><creator>Roberts, D.</creator><creator>Steimle, B.</creator><creator>Stipanuk, J.</creator><creator>Straub, S.</creator><creator>Sparks, T.</creator><creator>Tarabbia, M.</creator><creator>Thibieroz, H.</creator><creator>Miller, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies</title><author>Zurcher, P. ; Alluri, P. ; Chu, P. ; Duvallet, A. ; Happ, C. ; Henderson, R. ; Mendonca, J. ; Kim, M. ; Petras, M. ; Raymond, M. ; Remmel, T. ; Roberts, D. ; Steimle, B. ; Stipanuk, J. ; Straub, S. ; Sparks, T. ; Tarabbia, M. ; Thibieroz, H. ; Miller, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-99e67381624173dbefd65be30677ced866b3df8ae0183f86b701b0f574757dd33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Capacitance</topic><topic>Conductivity</topic><topic>Copper</topic><topic>Linearity</topic><topic>Metal-insulator structures</topic><topic>MIM capacitors</topic><topic>Noise reduction</topic><topic>Resistors</topic><topic>Temperature</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Zurcher, P.</creatorcontrib><creatorcontrib>Alluri, P.</creatorcontrib><creatorcontrib>Chu, P.</creatorcontrib><creatorcontrib>Duvallet, A.</creatorcontrib><creatorcontrib>Happ, C.</creatorcontrib><creatorcontrib>Henderson, R.</creatorcontrib><creatorcontrib>Mendonca, J.</creatorcontrib><creatorcontrib>Kim, M.</creatorcontrib><creatorcontrib>Petras, M.</creatorcontrib><creatorcontrib>Raymond, M.</creatorcontrib><creatorcontrib>Remmel, T.</creatorcontrib><creatorcontrib>Roberts, D.</creatorcontrib><creatorcontrib>Steimle, B.</creatorcontrib><creatorcontrib>Stipanuk, J.</creatorcontrib><creatorcontrib>Straub, S.</creatorcontrib><creatorcontrib>Sparks, T.</creatorcontrib><creatorcontrib>Tarabbia, M.</creatorcontrib><creatorcontrib>Thibieroz, H.</creatorcontrib><creatorcontrib>Miller, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Zurcher, P.</au><au>Alluri, P.</au><au>Chu, P.</au><au>Duvallet, A.</au><au>Happ, C.</au><au>Henderson, R.</au><au>Mendonca, J.</au><au>Kim, M.</au><au>Petras, M.</au><au>Raymond, M.</au><au>Remmel, T.</au><au>Roberts, D.</au><au>Steimle, B.</au><au>Stipanuk, J.</au><au>Straub, S.</au><au>Sparks, T.</au><au>Tarabbia, M.</au><au>Thibieroz, H.</au><au>Miller, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies</atitle><btitle>International Electron Devices Meeting 2000. 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| identifier | ISBN: 9780780364387 |
| ispartof | International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.153-156 |
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| language | eng |
| recordid | cdi_ieee_primary_904281 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitance Conductivity Copper Linearity Metal-insulator structures MIM capacitors Noise reduction Resistors Temperature Transistors |
| title | Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies |
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