Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies

Integration of thin film MIM capacitors and resistors into copper metallization based RF-CMOS and Bi-CMOS technologies

High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have been integrated in a dual-inlaid Cu-based backend for...

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Hauptverfasser: Zurcher, P., Alluri, P., Chu, P., Duvallet, A., Happ, C., Henderson, R., Mendonca, J., Kim, M., Petras, M., Raymond, M., Remmel, T., Roberts, D., Steimle, B., Stipanuk, J., Straub, S., Sparks, T., Tarabbia, M., Thibieroz, H., Miller, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Conductivity
Copper
Linearity
Metal-insulator structures
MIM capacitors
Noise reduction
Resistors
Temperature
Transistors
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Beschreibung
Zusammenfassung:High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have been integrated in a dual-inlaid Cu-based backend for mixed-signal applications. These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices.
DOI:10.1109/IEDM.2000.904281