Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors

Laser probing of bipolar amplification in 0.25-/spl mu/m MOS/SOI transistors

The parasitic bipolar amplification in MOS/SOI transistors determines the SEU sensitivity of actual devices. This response is experimentally measured in a set of single transistors using a focused picosecond laser with submicrometer spatial resolution. This technique, validated by comparing the SEU...

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Veröffentlicht in:IEEE transactions on nuclear science 2000-12, Vol.47 (6), p.2196-2203
Hauptverfasser: Musseau, O., Ferlet-Cavrois, V., Pelloie, J.L., Buchner, S., McMorrow, D., Campbell, A.B.
Format: Artikel
Sprache:eng
Schlagworte:
CMOS technology
Dielectrics
Doping
FETs
Isolation technology
Laboratories
Laser theory
MOS devices
MOSFETs
Space technology
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Zusammenfassung:The parasitic bipolar amplification in MOS/SOI transistors determines the SEU sensitivity of actual devices. This response is experimentally measured in a set of single transistors using a focused picosecond laser with submicrometer spatial resolution. This technique, validated by comparing the SEU behavior of registers irradiated with both laser and heavy ions, is relevant for both device physics and hardness assurance applications.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.903753