High temperature characterization of implanted-emitter 4H-SiC BJT
We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time decreases with increasing temperature.
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| creator | Yi Tang Fedison, J.B. Chow, T.P. |
| description | We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time decreases with increasing temperature. |
| doi_str_mv | 10.1109/CORNEL.2000.902536 |
| format | Conference Proceeding |
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The turn-off time decreases with increasing temperature.</description><subject>Annealing</subject><subject>Bipolar transistors</subject><subject>Circuit testing</subject><subject>Doping</subject><subject>Frequency</subject><subject>Manufacturing</subject><subject>Silicon carbide</subject><subject>Substrates</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><issn>1529-3068</issn><isbn>9780780363816</isbn><isbn>0780363817</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj9FKwzAUhgMqOOdeYFd5gc5zkjRJL2eZVikOdF6PND11kXUrabzQp99gwg_fxQcf_IzNERaIUDyU6_e3Vb0QALAoQORSX7FZYSycJ7W0qK_ZBHNRZBK0vWV34_gNIACFnrBlFb52PFE_UHTpJxL3OxedTxTDn0vheODHjod-2LtDojajPqSz46rKPkLJH1839-ymc_uRZv-css-n1aassnr9_FIu6ywgqJShck2nZZuTIpAGhOpEK6zTnsB4QN101ignCjDoGtTet4C5VMpQh1ainLL5pRuIaDvE0Lv4u70clicCAUjx</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Yi Tang</creator><creator>Fedison, J.B.</creator><creator>Chow, T.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>High temperature characterization of implanted-emitter 4H-SiC BJT</title><author>Yi Tang ; Fedison, J.B. ; Chow, T.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-14abf63d5e4e037024f2d28a6ce07c016bf874a29071ab16ccd0153447ef18313</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Annealing</topic><topic>Bipolar transistors</topic><topic>Circuit testing</topic><topic>Doping</topic><topic>Frequency</topic><topic>Manufacturing</topic><topic>Silicon carbide</topic><topic>Substrates</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><toplevel>online_resources</toplevel><creatorcontrib>Yi Tang</creatorcontrib><creatorcontrib>Fedison, J.B.</creatorcontrib><creatorcontrib>Chow, T.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yi Tang</au><au>Fedison, J.B.</au><au>Chow, T.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>High temperature characterization of implanted-emitter 4H-SiC BJT</atitle><btitle>Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122)</btitle><stitle>CORNEL</stitle><date>2000</date><risdate>2000</risdate><spage>178</spage><epage>181</epage><pages>178-181</pages><issn>1529-3068</issn><isbn>9780780363816</isbn><isbn>0780363817</isbn><abstract>We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time decreases with increasing temperature.</abstract><pub>IEEE</pub><doi>10.1109/CORNEL.2000.902536</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1529-3068 |
| ispartof | Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), 2000, p.178-181 |
| issn | 1529-3068 |
| language | eng |
| recordid | cdi_ieee_primary_902536 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Bipolar transistors Circuit testing Doping Frequency Manufacturing Silicon carbide Substrates Temperature Thermal conductivity |
| title | High temperature characterization of implanted-emitter 4H-SiC BJT |
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