High temperature characterization of implanted-emitter 4H-SiC BJT

High temperature characterization of implanted-emitter 4H-SiC BJT

We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time decreases with increasing temperature.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Yi Tang, Fedison, J.B., Chow, T.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Bipolar transistors
Circuit testing
Doping
Frequency
Manufacturing
Silicon carbide
Substrates
Temperature
Thermal conductivity
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We demonstrate high-temperature characteristics of the first epi-base, implanted-emitter npn bipolar transistor in 4H-SiC. The device shows high current gain with negative temperature coefficient. The turn-off time decreases with increasing temperature.
ISSN:1529-3068
DOI:10.1109/CORNEL.2000.902536