Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

Summary form only given. Recent development of micro-photoluminescence (/spl mu/-PL) spectroscopy has enabled us to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. We report on the /spl mu/-PL spectra of single GaAs/AlGaAs quantum d...

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Hauptverfasser: Watatani, C., Edamatsu, K., Itoh, T., Hayashi, H., Shimomura, S., Hiyamizu, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Excitons
Gallium arsenide
Laser excitation
Optical pulses
Optical surface waves
Photoluminescence
Pulse measurements
Quantum dot lasers
Quantum dots
US Department of Transportation
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creator Watatani, C.
Edamatsu, K.
Itoh, T.
Hayashi, H.
Shimomura, S.
Hiyamizu, S.
description Summary form only given. Recent development of micro-photoluminescence (/spl mu/-PL) spectroscopy has enabled us to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. We report on the /spl mu/-PL spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. We have observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.
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Recent development of micro-photoluminescence (/spl mu/-PL) spectroscopy has enabled us to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. We report on the /spl mu/-PL spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. We have observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.</description><identifier>ISSN: 1094-5695</identifier><identifier>ISBN: 1557526087</identifier><identifier>ISBN: 9781557526083</identifier><language>eng</language><publisher>IEEE</publisher><subject>Excitons ; Gallium arsenide ; Laser excitation ; Optical pulses ; Optical surface waves ; Photoluminescence ; Pulse measurements ; Quantum dot lasers ; Quantum dots ; US Department of Transportation</subject><ispartof>Quantum Electronics and Laser Science Conference (QELS 2000). 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identifier ISSN: 1094-5695
ispartof Quantum Electronics and Laser Science Conference (QELS 2000). Technical Digest. Postconference Edition. TOPS Vol.40 (IEEE Cat. No.00CH37089), 2000, p.57-58
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language eng
recordid cdi_ieee_primary_901612
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Excitons
Gallium arsenide
Laser excitation
Optical pulses
Optical surface waves
Photoluminescence
Pulse measurements
Quantum dot lasers
Quantum dots
US Department of Transportation
title Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface
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