Micro-photoluminescence of single GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface

Summary form only given. Recent development of micro-photoluminescence (/spl mu/-PL) spectroscopy has enabled us to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. We report on the /spl mu/-PL spectra of single GaAs/AlGaAs quantum d...

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Bibliographische Detailangaben
Hauptverfasser:	Watatani, C., Edamatsu, K., Itoh, T., Hayashi, H., Shimomura, S., Hiyamizu, S.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Excitons Gallium arsenide Laser excitation Optical pulses Optical surface waves Photoluminescence Pulse measurements Quantum dot lasers Quantum dots US Department of Transportation
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Zusammenfassung:	Summary form only given. Recent development of micro-photoluminescence (/spl mu/-PL) spectroscopy has enabled us to observe photoluminescence from a single quantum dot, which has sharp homogeneous linewidth and long coherence time. We report on the /spl mu/-PL spectra of single GaAs/AlGaAs quantum dots grown on a (411)A surface of a GaAs substrate. We have observed sharp luminescence lines originating not only from the lowest state of the confined exciton, but also from the excited states depending on the excitation power density.
ISSN:	1094-5695