Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2

In this work, we have demonstrated high-performance lateral \beta -Ga 2 O 3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate and source connected field-plate structures. Depletion-mode (D-mode) \beta -Ga 2 O 3 MOSFETs with gate-to-drain distance ( \text{L}_{\sf GD} ) of 4.8~\mu \text{m} /17.8 \mu \text{m} demonstrate a BV of 1.4 kV/2.9 kV and specific ON-resistance ( \text{R}_{ \mathrm{\scriptscriptstyle ON}, {\sf sp}} ) of 7.08 \text{m}\Omega \cdot cm 2 /46.2 \text{m}\Omega \cdot cm 2 , respectively, yielding a high P-FOM of 277 MW/cm 2 and averaged electrical field of 2.9 MV/cm for the device with \text{L}_{\sf GD} = {\sf 4.8}\,\, \mu \text{m} . To the best of all the authors' knowledge, this P-FOM of 277 MW/cm 2 and BV = 2.9 kV are the highest values among all the lateral D-mode \beta -Ga 2 O 3 MOSFETs. Combined with negligible gate pulsed and drain pulsed current collapse and drain current on/off ratio of 10 9 , these \beta -Ga 2 O 3 MOSFETs show a great potential for future power electronic applications.