Characteristics of direct and indirect active matrix flat-panel portal imagers

Recent advances in thin film transistor (TFT) technology have allowed the construction of active matrix flat-panel imagers (AMFPI) for use in both diagnostic and portal imaging. Since the design of such systems is still in the development stage, it is unclear what detector characteristics are requir...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lachaine, M., Fallone, B.G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Recent advances in thin film transistor (TFT) technology have allowed the construction of active matrix flat-panel imagers (AMFPI) for use in both diagnostic and portal imaging. Since the design of such systems is still in the development stage, it is unclear what detector characteristics are required in order to optimize these detectors. For this reason a theoretical framework is needed. Although theories have been developed for diagnostic radiology using cascaded linear systems analysis, a theory which agrees with experimental data is lacking for megavoltage energies. In this work, we extend the theories which have been successful in describing diagnostic AMFPI detectors, and develop a general equation which can be used for both diagnostic and portal imaging, and with direct and indirect AMFPIs. We validate this theory with existing experimental data. We use the theory to determine the design requirements of AMFPIs for portal imaging, and to explore the possible advantages of a direct detection technique based on the photoconductor amorphous selenium (a-Se),.
ISSN:1094-687X
1558-4615
DOI:10.1109/IEMBS.2000.897909