A new and novel ultra high speed 1 kV MOSFET SPICE model

Improvements in packaging and fabrication for the DE-SERIES Fast Power/sup TM/ MOSFETs has sparked interest in creating an accurate model of these devices. The goal of these new devices is to design new ultra fast pulse generators. As pulsed power components increase in speed, equipment to take advantage of that speed need to keep up. However, the built-in MOSFET models found in SPICE are more attuned to the modeling of low voltage MOSFETs such as those encountered in integrated circuits, rather than for power MOSFETs. In the absence of a suitable built-in model, the power MOSFET is simulated by combining further elements with the built-in model resulting in a more faithful representation of the power MOSFET. This paper describes the model's specific characteristics as well as its adaptability to different devices. For example the turn on and turn off time are both independently adjustable, as well as the saturation voltage and feedback capacitance. This and many other options allow the model to be compared to empirical test results of various MOSFET devices and easily match their characteristics to the model.