High-Q poly-to-poly capacitor design for RF applications

High-Q poly-to-poly capacitor design for RF applications

A very high-Q poly-to-poly capacitor structure and the measurement results are presented. The poly-to-poly capacitor is designed on a conventional 0.35 /spl mu/m CMOS process. Through the layout optimization, a Q-factor greater than 120 is obtained at 2 GHz.

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Bibliographische Detailangaben
Hauptverfasser: Jin-Taek Lee, Jeong-Ki Choi, Sang-Gug Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Abstracts
Availability
Capacitors
CMOS process
CMOS technology
Equivalent circuits
Parasitic capacitance
Q factor
Radio frequency
Silicon
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Beschreibung
Zusammenfassung:A very high-Q poly-to-poly capacitor structure and the measurement results are presented. The poly-to-poly capacitor is designed on a conventional 0.35 /spl mu/m CMOS process. Through the layout optimization, a Q-factor greater than 120 is obtained at 2 GHz.
DOI:10.1109/ICMMT.2000.895655