Optimum Ge profile for the high cut-off frequency of SiGe HBT

Optimum Ge profile for the high cut-off frequency of SiGe HBT

This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's). Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. A HBT with a 15% triangular Ge profile sho...

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Bibliographische Detailangaben
Hauptverfasser: Sunghoon Kim, Kyunghae Kim, Junsin Yi, Hoongjoo Lee, Byungryul Ryum
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Boron
Computational modeling
Cutoff frequency
Fabrication
Germanium silicon alloys
Heterojunction bipolar transistors
Shape
Silicon germanium
Tunneling
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Beschreibung
Zusammenfassung:This paper analyzes the effects of Ge profiles shape of SiGe heterojunction bipolar transistors (HBT's). Device simulations using ATLAS/BLAZE for the SiGe HBT with trapezoidal or triangular Ge profile are carried out to optimize the device performance. A HBT with a 15% triangular Ge profile shows a higher cut-off frequency and DC current gain than that with a 19% trapezoidal Ge profile. The cut-off frequency and DC gain are increased from 42 GHz to 84 GHz and from 200 to 600, respectively.
DOI:10.1109/ICMMT.2000.895626