Research on Linearity Improvement of Silicon-Based p-i-n Diode Limiters

The threshold is a key indicator of linearity for limiters. However, the threshold of silicon-based p-i-n diode limiters drops rapidly at low frequencies. This letter presents a novel method to improve the threshold of limiters for protecting analog-to-digital converters. A silicon-based p-i-n diode...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2020-01, Vol.30 (1), p.62-65
Hauptverfasser:	Deng, Shixiong, Gao, Changzheng, Chen, Shubin, Sun, Jiyong, Wu, Kang
Format:	Artikel
Sprache:	eng
Schlagworte:	Analog to digital conversion Analog to digital converters Analog-to-digital converters (ADCs) Avalanche diodes limiters Linearity Microwave circuits Microwave FET integrated circuits p-i-n diode P-i-n diodes PIN photodiodes Silicon threshold zener diode
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Zusammenfassung:	The threshold is a key indicator of linearity for limiters. However, the threshold of silicon-based p-i-n diode limiters drops rapidly at low frequencies. This letter presents a novel method to improve the threshold of limiters for protecting analog-to-digital converters. A silicon-based p-i-n diode and a zener diode were stacked as a thicker p-i-n diode. Three 30-300-MHz limiters using the same p-i-n diode and different zener diodes were designed. Both the simulated and measured results are presented to verify this method. The results show that the thresholds were improved by 12, 19, and 21 dB, respectively.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2019.2957216