Characterization of heterostructure barrier varactors for 255 GHz tripling operation

Characterization of heterostructure barrier varactors for 255 GHz tripling operation

Al/sub 0.7/Ga/sub 0.3/As/GaAs and In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HBV diodes with different mesa diameters have been fabricated and their DC characteristics have been measured. These characteristics are used by a combined genetic algorithm/harmonic balance simulator to calc...

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Hauptverfasser: Saglam, M., Bozzi, M., Rodriguez-Girons, M., Lin, C., Megej, A., Perregrini, L., Hartnagel, H.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance-voltage characteristics
Circuits
Diodes
Fabrication
Gallium arsenide
Genetics
Impedance
Indium compounds
Indium phosphide
Varactors
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Zusammenfassung:Al/sub 0.7/Ga/sub 0.3/As/GaAs and In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP HBV diodes with different mesa diameters have been fabricated and their DC characteristics have been measured. These characteristics are used by a combined genetic algorithm/harmonic balance simulator to calculate the optimum impedance and output power at 255 GHz. A comparison of the conversion efficiencies is presented for the two material systems.
DOI:10.1109/ICIMW.2000.893038