Comparative analysis of PD-SOI active body-biasing circuits

The body of SOI partially depleted MOSFETs can be biased to control the threshold dynamically. In the dynamic threshold MOSFET (DTMOS) (Assaderaghi et al, 1997), the operation is limited to about V/sub dd/=0.7 V because of the forward bias of the B-D and B-S junctions. Active body-biasing circuits (ABC-SOI) use auxiliary transistors to implement the bias circuitry and to increase the V/sub dd/ limit (Chuang et al., 1998; Chung et al., 1997; Gil et al., 1998; Lee et al., 1998). In this paper, previously reported and new ABCs are analyzed. The speed-power trade-off and the delay stability, one of the most peculiar PD problems, are examined in several operating conditions.