An SOI-based three-dimensional integrated circuit technology

Three-dimensional integrated circuits (3D-ICs) composed of active circuit layers that are vertically stacked and interconnected are expected to lead to improved logic devices, memories, CPUs, and photosensors (Akasaka, 1986). These circuits require high-density vertical interconnections (3D vias) co...

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Hauptverfasser: Burns, J., McIlrath, L., Hopwood, J., Keast, C., Vu, D.P., Warner, K., Wyatt, P.
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:Three-dimensional integrated circuits (3D-ICs) composed of active circuit layers that are vertically stacked and interconnected are expected to lead to improved logic devices, memories, CPUs, and photosensors (Akasaka, 1986). These circuits require high-density vertical interconnections (3D vias) comparable in aspect ratio to present multilevel vias (Reber and Tielert, 1996). We have constructed and tested 3D ring oscillators and fully parallel 64/spl times/64 active pixel sensors using a 3D assembly technology which utilizes SOI wafers to achieve stacking of multiple circuit layers and unrestricted placement of dense 3D vias.
ISSN:1078-621X
2577-2295
DOI:10.1109/SOI.2000.892749