Influencing Light and Elevated Temperature Induced Degradation and Surface-Related Degradation Kinetics in Float-Zone Silicon by Varying the Initial Sample State

Light and elevated temperature induced degradation (LeTID) kinetics in float-zone silicon are investigated by varying the initial sample state, composed of different base material, base doping, SiNx:H films, and subsequent firing, and/or annealing steps. The approach of deliberately changing the ini...

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Veröffentlicht in:IEEE journal of photovoltaics 2020-01, Vol.10 (1), p.85-93
Hauptverfasser: Hammann, Benjamin, Engelhardt, Josh, Sperber, David, Herguth, Axel, Hahn, Giso
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Sprache:eng
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Zusammenfassung:Light and elevated temperature induced degradation (LeTID) kinetics in float-zone silicon are investigated by varying the initial sample state, composed of different base material, base doping, SiNx:H films, and subsequent firing, and/or annealing steps. The approach of deliberately changing the initial sample state is shown to allow for specific studies of influences of LeTID kinetics. Bulk- and surface-related degradations are examined separately and the influence on the kinetics of bulk- and surface-related degradation is illustrated by a four-state and three-state model, respectively. In case of bulk-related degradation, an increase in defect density because of the firing step is shown, whereas the annealing step has an inverse effect. Both temperature steps- individually and combined-influence the transition rates of bulk- related degradation and regeneration by presumably changing the distribution of a defect precursor. For surface-related degradation, the firing step reduces the transition rate from the initial to the degraded state. In addition, the influence of a comparably humid atmosphere and the absence of UV light are found to be negligible.
ISSN:2156-3381
2156-3403
DOI:10.1109/JPHOTOV.2019.2954768