Effect of thermal annealing and high-power microwave radiation on characteristics of combined resonant tunneling structures

The effects of microwave treatment on the current transport mechanisms in tunneling diode with coupled delta-doped layers are studied. To separate thermal effects from those having electromagnetic origin the experiments with short thermal annealing of the samples have been made. It is shown that two processes occur under action of power electromagnetic field. In the beginning the quantum-sized well is spread due to diffusion of impurities from the delta layer induced by electric field. In further the accumulation of generation-recombination centers occurs within the space charge region that leads to considerable growth of the excess current.