AlGaN/GaN heterostructures for UV photodetector applications
Metalorganic vapour phase epitaxy (MOVPE) process parameters of Al/sub x/Ga/sub 1-x/N (0
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| creator | Boratynski, B. Paszkiewicz, R. Paszkiewicz, B. Jankowski, B. Tlaczala, M. |
| description | Metalorganic vapour phase epitaxy (MOVPE) process parameters of Al/sub x/Ga/sub 1-x/N (0 |
| doi_str_mv | 10.1109/ASDAM.2000.889500 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_889500</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>889500</ieee_id><sourcerecordid>889500</sourcerecordid><originalsourceid>FETCH-LOGICAL-i174t-3fb334e6235918031d3607da2a434ef0737d234a7582f6e34fd9c0feb50e184b3</originalsourceid><addsrcrecordid>eNotT1FLwzAYDIigzP4AfeofaPelX9ok4EuZuglTH7b5OtLmC6tUW5LswX9vYMIdB3dw3DF2z6HkHPSy3T21b2UFAKVSuga4YpmWChKw1qjhhmUhfKUcUGMNzS17bMe1eV8m5ieK5KcQ_bmPZ08hd5PPD5_5fJriZFPYx2SYeR6H3sRh-gl37NqZMVD2rwt2eHnerzbF9mP9umq3xcCliAW6DlFQU6URPE3hFhuQ1lRGJNuBRGkrFEbWqnINoXBW9-Coq4G4Eh0u2MOldyCi4-yHb-N_j5eL-AfOR0ZA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>AlGaN/GaN heterostructures for UV photodetector applications</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Boratynski, B. ; Paszkiewicz, R. ; Paszkiewicz, B. ; Jankowski, B. ; Tlaczala, M.</creator><creatorcontrib>Boratynski, B. ; Paszkiewicz, R. ; Paszkiewicz, B. ; Jankowski, B. ; Tlaczala, M.</creatorcontrib><description>Metalorganic vapour phase epitaxy (MOVPE) process parameters of Al/sub x/Ga/sub 1-x/N (0<x<0.3) layers grown on c-oriented sapphire substrates were optimised from the point of view of their application in photoconductive and MSM type photodetectors. The low temperature AlN was used as a nucleation layer. The layers' electrical properties were determined by C-V measurements performed in the range 5 Hz-13 MHz with a HP 4192A impedance meter using a mercury probe. The optical characterisation of Al/sub x/Ga/sub 1-x/N was performed by photoluminescence measurement at liquid He and room temperature. The aluminium mole fraction in the layers was determined and compared to the results derived from X-ray diffraction measurements. The photoconductive detectors were fabricated with Ti/Al/Ni/Au ohmic contacts. The I-V characteristics were taken and the photoresponse of the detectors was measured.</description><identifier>ISBN: 9780780359390</identifier><identifier>ISBN: 0780359399</identifier><identifier>DOI: 10.1109/ASDAM.2000.889500</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; Detectors ; Epitaxial growth ; Epitaxial layers ; Gallium nitride ; Performance evaluation ; Photoconducting materials ; Photodetectors ; Substrates ; Temperature</subject><ispartof>ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386), 2000, p.277-280</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/889500$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/889500$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Boratynski, B.</creatorcontrib><creatorcontrib>Paszkiewicz, R.</creatorcontrib><creatorcontrib>Paszkiewicz, B.</creatorcontrib><creatorcontrib>Jankowski, B.</creatorcontrib><creatorcontrib>Tlaczala, M.</creatorcontrib><title>AlGaN/GaN heterostructures for UV photodetector applications</title><title>ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)</title><addtitle>ASDAM</addtitle><description>Metalorganic vapour phase epitaxy (MOVPE) process parameters of Al/sub x/Ga/sub 1-x/N (0<x<0.3) layers grown on c-oriented sapphire substrates were optimised from the point of view of their application in photoconductive and MSM type photodetectors. The low temperature AlN was used as a nucleation layer. The layers' electrical properties were determined by C-V measurements performed in the range 5 Hz-13 MHz with a HP 4192A impedance meter using a mercury probe. The optical characterisation of Al/sub x/Ga/sub 1-x/N was performed by photoluminescence measurement at liquid He and room temperature. The aluminium mole fraction in the layers was determined and compared to the results derived from X-ray diffraction measurements. The photoconductive detectors were fabricated with Ti/Al/Ni/Au ohmic contacts. The I-V characteristics were taken and the photoresponse of the detectors was measured.</description><subject>Aluminum gallium nitride</subject><subject>Detectors</subject><subject>Epitaxial growth</subject><subject>Epitaxial layers</subject><subject>Gallium nitride</subject><subject>Performance evaluation</subject><subject>Photoconducting materials</subject><subject>Photodetectors</subject><subject>Substrates</subject><subject>Temperature</subject><isbn>9780780359390</isbn><isbn>0780359399</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotT1FLwzAYDIigzP4AfeofaPelX9ok4EuZuglTH7b5OtLmC6tUW5LswX9vYMIdB3dw3DF2z6HkHPSy3T21b2UFAKVSuga4YpmWChKw1qjhhmUhfKUcUGMNzS17bMe1eV8m5ieK5KcQ_bmPZ08hd5PPD5_5fJriZFPYx2SYeR6H3sRh-gl37NqZMVD2rwt2eHnerzbF9mP9umq3xcCliAW6DlFQU6URPE3hFhuQ1lRGJNuBRGkrFEbWqnINoXBW9-Coq4G4Eh0u2MOldyCi4-yHb-N_j5eL-AfOR0ZA</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Boratynski, B.</creator><creator>Paszkiewicz, R.</creator><creator>Paszkiewicz, B.</creator><creator>Jankowski, B.</creator><creator>Tlaczala, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>AlGaN/GaN heterostructures for UV photodetector applications</title><author>Boratynski, B. ; Paszkiewicz, R. ; Paszkiewicz, B. ; Jankowski, B. ; Tlaczala, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i174t-3fb334e6235918031d3607da2a434ef0737d234a7582f6e34fd9c0feb50e184b3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Aluminum gallium nitride</topic><topic>Detectors</topic><topic>Epitaxial growth</topic><topic>Epitaxial layers</topic><topic>Gallium nitride</topic><topic>Performance evaluation</topic><topic>Photoconducting materials</topic><topic>Photodetectors</topic><topic>Substrates</topic><topic>Temperature</topic><toplevel>online_resources</toplevel><creatorcontrib>Boratynski, B.</creatorcontrib><creatorcontrib>Paszkiewicz, R.</creatorcontrib><creatorcontrib>Paszkiewicz, B.</creatorcontrib><creatorcontrib>Jankowski, B.</creatorcontrib><creatorcontrib>Tlaczala, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Boratynski, B.</au><au>Paszkiewicz, R.</au><au>Paszkiewicz, B.</au><au>Jankowski, B.</au><au>Tlaczala, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>AlGaN/GaN heterostructures for UV photodetector applications</atitle><btitle>ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)</btitle><stitle>ASDAM</stitle><date>2000</date><risdate>2000</risdate><spage>277</spage><epage>280</epage><pages>277-280</pages><isbn>9780780359390</isbn><isbn>0780359399</isbn><abstract>Metalorganic vapour phase epitaxy (MOVPE) process parameters of Al/sub x/Ga/sub 1-x/N (0<x<0.3) layers grown on c-oriented sapphire substrates were optimised from the point of view of their application in photoconductive and MSM type photodetectors. The low temperature AlN was used as a nucleation layer. The layers' electrical properties were determined by C-V measurements performed in the range 5 Hz-13 MHz with a HP 4192A impedance meter using a mercury probe. The optical characterisation of Al/sub x/Ga/sub 1-x/N was performed by photoluminescence measurement at liquid He and room temperature. The aluminium mole fraction in the layers was determined and compared to the results derived from X-ray diffraction measurements. The photoconductive detectors were fabricated with Ti/Al/Ni/Au ohmic contacts. The I-V characteristics were taken and the photoresponse of the detectors was measured.</abstract><pub>IEEE</pub><doi>10.1109/ASDAM.2000.889500</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum gallium nitride Detectors Epitaxial growth Epitaxial layers Gallium nitride Performance evaluation Photoconducting materials Photodetectors Substrates Temperature |
| title | AlGaN/GaN heterostructures for UV photodetector applications |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T15%3A16%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=AlGaN/GaN%20heterostructures%20for%20UV%20photodetector%20applications&rft.btitle=ASDAM%202000.%20Conference%20Proceedings.%20Third%20International%20EuroConference%20on%20Advanced%20Semiconductor%20Devices%20and%20Microsystems%20(Cat.%20No.00EX386)&rft.au=Boratynski,%20B.&rft.date=2000&rft.spage=277&rft.epage=280&rft.pages=277-280&rft.isbn=9780780359390&rft.isbn_list=0780359399&rft_id=info:doi/10.1109/ASDAM.2000.889500&rft_dat=%3Cieee_6IE%3E889500%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=889500&rfr_iscdi=true |