Effect of Oxygen Concentration Ratio on a Ga2O3-Based Resistive Random Access Memory

Effect of Oxygen Concentration Ratio on a Ga2O3-Based Resistive Random Access Memory

In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O 2 gas flow was carefully controlled by different oxygen concentration to obtain proper Ga 2 O 3 film. It was demonstrated that the performance of the devices was imp...

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Veröffentlicht in:IEEE access 2019, Vol.7, p.175186-175191
Hauptverfasser: Yang, Chih-Chiang, Huang, Jin-Quan, Chen, Kuan-Yu, Chiu, Pei-Hsuan, Vu, Hoang-Tuan, Su, Yan-Kuin
Format: Artikel
Sprache:eng
Schlagworte:
Electrical properties
Electrodes
Gallium oxides
Gas flow
Ga₂O
High resistance
Indium tin oxide
Ions
Low resistance
Magnetron sputtering
Metals
Oxygen
Random access memory
Resistance
resistive switching
RF sputter
Switches
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Zusammenfassung:In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O 2 gas flow was carefully controlled by different oxygen concentration to obtain proper Ga 2 O 3 film. It was demonstrated that the performance of the devices was improved by optimizing oxygen vacancy through deposition condition. Consequently, the sample with 25% of oxygen concentration exhibited the outstanding electrical properties with maximum cycles of 220, an I on /I off ratio of 5 × 10 4 , retention time of 10 4 s, high resistance state /low resistance state ratio of 7 × 10 5 under 0.1V read voltage.
ISSN:2169-3536
DOI:10.1109/ACCESS.2019.2948423