Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5
This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/sub 5/), a significant improvement in the dielectric...
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| Veröffentlicht in: | IEEE electron device letters 2000-12, Vol.21 (12), p.563-565 |
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| container_title | IEEE electron device letters |
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| creator | Jung, Hyungsuk Im, Kiju Yang, Dooyoung Hwang, Hyunsang |
| description | This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/sub 5/), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaO/sub x/N/sub y/) by Auger electron spectroscopy. Compared with NH/sub 3/ nitridation, tantalum oxynitride prepared by nitridation in ND/sub 3/ shows less charge trapping and larger charge-to-breakdown characteristics. |
| doi_str_mv | 10.1109/55.887466 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_887466</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>887466</ieee_id><sourcerecordid>2633202061</sourcerecordid><originalsourceid>FETCH-LOGICAL-i265t-26243a7138fb604cdd71e281f3a15a0290e5c97da00c6b6a9fa644fb2dc333f3</originalsourceid><addsrcrecordid>eNotkDtPwzAUhS0EEqUwsDJZ7Cl-Jx5RKQ-papfs0Y1907oKaXBcifx7gtrpLN_5jnQIeeRswTmzL1oviiJXxlyRGde6yJg28prMWK54Jjkzt-RuGA6McaVyNSNp1aJLMThoKXSeRmwD1KENaaRuDxFcwhiGFNxAj82E0FObIqR96GgJ29_NSHeQkPqAFxHtI_YQ0dN6pJs3OXU6hDZ0u39BCWKr78lNA-2AD5eck_J9VS4_s_X242v5us6CMDplwgglIeeyaGrDlPM-5ygK3kjgGpiwDLWzuQfGnKkN2AaMUk0tvJNSNnJOns_aPh5_Tjik6nA8xW5arKy10pjC5hP0dIYCIlZ9DN8Qx-r8ofwDrppkMw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>999366897</pqid></control><display><type>article</type><title>Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5</title><source>IEEE Electronic Library (IEL)</source><creator>Jung, Hyungsuk ; Im, Kiju ; Yang, Dooyoung ; Hwang, Hyunsang</creator><creatorcontrib>Jung, Hyungsuk ; Im, Kiju ; Yang, Dooyoung ; Hwang, Hyunsang</creatorcontrib><description>This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/sub 5/), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaO/sub x/N/sub y/) by Auger electron spectroscopy. Compared with NH/sub 3/ nitridation, tantalum oxynitride prepared by nitridation in ND/sub 3/ shows less charge trapping and larger charge-to-breakdown characteristics.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.887466</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Dielectric constant ; Dielectric devices ; High-K gate dielectrics ; Interface states ; Leakage current ; MOSFET circuits ; Neodymium ; Nitrogen ; Plasma temperature ; Tunneling</subject><ispartof>IEEE electron device letters, 2000-12, Vol.21 (12), p.563-565</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/887466$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/887466$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Jung, Hyungsuk</creatorcontrib><creatorcontrib>Im, Kiju</creatorcontrib><creatorcontrib>Yang, Dooyoung</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><title>Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/sub 5/), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaO/sub x/N/sub y/) by Auger electron spectroscopy. Compared with NH/sub 3/ nitridation, tantalum oxynitride prepared by nitridation in ND/sub 3/ shows less charge trapping and larger charge-to-breakdown characteristics.</description><subject>Dielectric constant</subject><subject>Dielectric devices</subject><subject>High-K gate dielectrics</subject><subject>Interface states</subject><subject>Leakage current</subject><subject>MOSFET circuits</subject><subject>Neodymium</subject><subject>Nitrogen</subject><subject>Plasma temperature</subject><subject>Tunneling</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotkDtPwzAUhS0EEqUwsDJZ7Cl-Jx5RKQ-papfs0Y1907oKaXBcifx7gtrpLN_5jnQIeeRswTmzL1oviiJXxlyRGde6yJg28prMWK54Jjkzt-RuGA6McaVyNSNp1aJLMThoKXSeRmwD1KENaaRuDxFcwhiGFNxAj82E0FObIqR96GgJ29_NSHeQkPqAFxHtI_YQ0dN6pJs3OXU6hDZ0u39BCWKr78lNA-2AD5eck_J9VS4_s_X242v5us6CMDplwgglIeeyaGrDlPM-5ygK3kjgGpiwDLWzuQfGnKkN2AaMUk0tvJNSNnJOns_aPh5_Tjik6nA8xW5arKy10pjC5hP0dIYCIlZ9DN8Qx-r8ofwDrppkMw</recordid><startdate>200012</startdate><enddate>200012</enddate><creator>Jung, Hyungsuk</creator><creator>Im, Kiju</creator><creator>Yang, Dooyoung</creator><creator>Hwang, Hyunsang</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200012</creationdate><title>Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5</title><author>Jung, Hyungsuk ; Im, Kiju ; Yang, Dooyoung ; Hwang, Hyunsang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i265t-26243a7138fb604cdd71e281f3a15a0290e5c97da00c6b6a9fa644fb2dc333f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Dielectric constant</topic><topic>Dielectric devices</topic><topic>High-K gate dielectrics</topic><topic>Interface states</topic><topic>Leakage current</topic><topic>MOSFET circuits</topic><topic>Neodymium</topic><topic>Nitrogen</topic><topic>Plasma temperature</topic><topic>Tunneling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jung, Hyungsuk</creatorcontrib><creatorcontrib>Im, Kiju</creatorcontrib><creatorcontrib>Yang, Dooyoung</creatorcontrib><creatorcontrib>Hwang, Hyunsang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jung, Hyungsuk</au><au>Im, Kiju</au><au>Yang, Dooyoung</au><au>Hwang, Hyunsang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2000-12</date><risdate>2000</risdate><volume>21</volume><issue>12</issue><spage>563</spage><epage>565</epage><pages>563-565</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/sub 5/), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaO/sub x/N/sub y/) by Auger electron spectroscopy. Compared with NH/sub 3/ nitridation, tantalum oxynitride prepared by nitridation in ND/sub 3/ shows less charge trapping and larger charge-to-breakdown characteristics.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/55.887466</doi><tpages>3</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Dielectric constant Dielectric devices High-K gate dielectrics Interface states Leakage current MOSFET circuits Neodymium Nitrogen Plasma temperature Tunneling |
| title | Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5 |
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