Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5

Electrical and reliability characteristics of an ultrathin TaOxNy gate dielectric prepared by ND3 annealing of Ta2O5

This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/sub 5/), a significant improvement in the dielectric...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2000-12, Vol.21 (12), p.563-565
Hauptverfasser: Jung, Hyungsuk, Im, Kiju, Yang, Dooyoung, Hwang, Hyunsang
Format: Artikel
Sprache:eng
Schlagworte:
Dielectric constant
Dielectric devices
High-K gate dielectrics
Interface states
Leakage current
MOSFET circuits
Neodymium
Nitrogen
Plasma temperature
Tunneling
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaO/sub x/N/sub y/) via the ND/sub 3/ annealing of Ta/sub 2/O/sub 5/, for use in gate dielectric applications. Compared with tantalum oxide (Ta/sub 2/O/sub 5/), a significant improvement in the dielectric constant was obtained by the ammonia treatment followed by light reoxidation in a wet ambient. We were able to confirm nitrogen incorporation in the tantalum oxynitride (TaO/sub x/N/sub y/) by Auger electron spectroscopy. Compared with NH/sub 3/ nitridation, tantalum oxynitride prepared by nitridation in ND/sub 3/ shows less charge trapping and larger charge-to-breakdown characteristics.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.887466