Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications
In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing elec...
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| Veröffentlicht in: | IEEE transactions on electron devices 2019-11, Vol.66 (11), p.4842-4849 |
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| container_issue | 11 |
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| container_title | IEEE transactions on electron devices |
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| creator | Nakamura, Katsumi Masuoka, Fumihito Nishii, Akito Nishizawa, Shin-ichi Furukawa, Akihiko |
| description | In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss. |
| doi_str_mv | 10.1109/TED.2019.2941710 |
| format | Article |
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These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2019.2941710</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Aerodynamics ; Cathode region ; Cathodes ; Computer simulation ; Destruction ; Diodes ; dynamic ruggedness ; Electric fields ; freewheeling diode (FWD) ; Insulated gate bipolar transistors ; local heating ; oscillation ; Oscillators ; Plasmas ; Recovery ; reverse recovery ; Ruggedness ; Semiconductor diodes ; snap-off ; Switches</subject><ispartof>IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4842-4849</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-a4d4504ffc50d82e3b3c0619daa4f2abb183428a16ecac4a7beba70e59a7c5b83</citedby><cites>FETCH-LOGICAL-c291t-a4d4504ffc50d82e3b3c0619daa4f2abb183428a16ecac4a7beba70e59a7c5b83</cites><orcidid>0000-0002-1452-8880</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8852709$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8852709$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Nakamura, Katsumi</creatorcontrib><creatorcontrib>Masuoka, Fumihito</creatorcontrib><creatorcontrib>Nishii, Akito</creatorcontrib><creatorcontrib>Nishizawa, Shin-ichi</creatorcontrib><creatorcontrib>Furukawa, Akihiko</creatorcontrib><title>Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss.</description><subject>Aerodynamics</subject><subject>Cathode region</subject><subject>Cathodes</subject><subject>Computer simulation</subject><subject>Destruction</subject><subject>Diodes</subject><subject>dynamic ruggedness</subject><subject>Electric fields</subject><subject>freewheeling diode (FWD)</subject><subject>Insulated gate bipolar transistors</subject><subject>local heating</subject><subject>oscillation</subject><subject>Oscillators</subject><subject>Plasmas</subject><subject>Recovery</subject><subject>reverse recovery</subject><subject>Ruggedness</subject><subject>Semiconductor diodes</subject><subject>snap-off</subject><subject>Switches</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1Lw0AQxRdRsFbvgpcFz6n7lWT3WPsNBUEjHpfNZpJsSZOYpJT-926teBiG4b03w_wQeqRkQilRL8liPmGEqglTgsaUXKERDcM4UJGIrtGIECoDxSW_RXd9v_NjJAQboWLZARxLgMrVBZ67JgOcgC3rpmqKE_5yQ4m3zdFX32NTZ3jtihLPT7XZO4vfD0UBWQ1ec_WvFHy0ABnerF4TPG3bylkzuKbu79FNbqoeHv76GH0uF8lsHWzfVpvZdBtYpugQGJGJkIg8tyHJJAOecksiqjJjRM5MmlLJBZOGRmCNFSZOITUxgVCZ2Iap5GP0fNnbds33AfpB75pDV_uTmnHqScVUCO8iF5ft_F8d5Lrt3N50J02JPuPUHqc-49R_OH3k6RJxAPBvlzJkMVH8BwlbcO4</recordid><startdate>20191101</startdate><enddate>20191101</enddate><creator>Nakamura, Katsumi</creator><creator>Masuoka, Fumihito</creator><creator>Nishii, Akito</creator><creator>Nishizawa, Shin-ichi</creator><creator>Furukawa, Akihiko</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-1452-8880</orcidid></search><sort><creationdate>20191101</creationdate><title>Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications</title><author>Nakamura, Katsumi ; Masuoka, Fumihito ; Nishii, Akito ; Nishizawa, Shin-ichi ; Furukawa, Akihiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c291t-a4d4504ffc50d82e3b3c0619daa4f2abb183428a16ecac4a7beba70e59a7c5b83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Aerodynamics</topic><topic>Cathode region</topic><topic>Cathodes</topic><topic>Computer simulation</topic><topic>Destruction</topic><topic>Diodes</topic><topic>dynamic ruggedness</topic><topic>Electric fields</topic><topic>freewheeling diode (FWD)</topic><topic>Insulated gate bipolar transistors</topic><topic>local heating</topic><topic>oscillation</topic><topic>Oscillators</topic><topic>Plasmas</topic><topic>Recovery</topic><topic>reverse recovery</topic><topic>Ruggedness</topic><topic>Semiconductor diodes</topic><topic>snap-off</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakamura, Katsumi</creatorcontrib><creatorcontrib>Masuoka, Fumihito</creatorcontrib><creatorcontrib>Nishii, Akito</creatorcontrib><creatorcontrib>Nishizawa, Shin-ichi</creatorcontrib><creatorcontrib>Furukawa, Akihiko</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Nakamura, Katsumi</au><au>Masuoka, Fumihito</au><au>Nishii, Akito</au><au>Nishizawa, Shin-ichi</au><au>Furukawa, Akihiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2019-11-01</date><risdate>2019</risdate><volume>66</volume><issue>11</issue><spage>4842</spage><epage>4849</epage><pages>4842-4849</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>In this article, we investigated two typical destruction modes during reverse recovery in power diodes. These phenomena originated, while using numerical simulation analysis, in snap-off behavior and local heating during the recovery period in modern high-frequency power application. A relaxing electric field and optimizing electron injection efficiency at the cathode region prevent the above behavior. These improvements are the result of controlling the carrier plasma layer and its interaction with the electric field in the drift region during the recovery process. This article demonstrates the effective diode technology that achieves superior dynamic ruggedness with low overall loss.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2019.2941710</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-1452-8880</orcidid></addata></record> |
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| source | IEEE/IET Electronic Library (IEL) |
| subjects | Aerodynamics Cathode region Cathodes Computer simulation Destruction Diodes dynamic ruggedness Electric fields freewheeling diode (FWD) Insulated gate bipolar transistors local heating oscillation Oscillators Plasmas Recovery reverse recovery Ruggedness Semiconductor diodes snap-off Switches |
| title | Freewheeling Diode Technology With Low Loss and High Dynamic Ruggedness in High-Speed IGBT Applications |
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