Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters
The electrical characteristics of deep submicron bipolar transistors incorporating low thermal budget in-situ phosphorus doped single crystal silicon emitters are reported. This type of transistor exhibits a very ideal base current ideality factor and low emitter resistance. The use of in-situ phosp...
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| creator | Abdul-Rahim, A.I. Marsh, C.D. Nash, G.R. Mitchell, M. Booker, G.R. Ashburn, P. |
| description | The electrical characteristics of deep submicron bipolar transistors incorporating low thermal budget in-situ phosphorus doped single crystal silicon emitters are reported. This type of transistor exhibits a very ideal base current ideality factor and low emitter resistance. The use of in-situ phosphorus doping is shown to eliminate the degradation of electrical characteristics seen in small geometry transistors due to emitter plug effects. |
| doi_str_mv | 10.1109/ICM.2000.884852 |
| format | Conference Proceeding |
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The use of in-situ phosphorus doping is shown to eliminate the degradation of electrical characteristics seen in small geometry transistors due to emitter plug effects.</description><subject>Application specific processors</subject><subject>Bipolar transistors</subject><subject>Doping</subject><subject>Electric resistance</subject><subject>Electric variables</subject><subject>Geometry</subject><subject>Plugs</subject><subject>Silicon</subject><subject>Thermal degradation</subject><subject>Thermal resistance</subject><isbn>9780780366435</isbn><isbn>0780366433</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkN1qwzAMhQ1jsNH1erArv0A6J44T53KU_RQ6dtP7Yitqo5E0wXJW-ip72hk6kBAHHX0HJMRjrlZ5rprnzfpzVSilVtaW1hQ3YtnUVqXSVVVqcyeWzN9pr3RjSlvdi9_NMIXxB1uJPUIMBK6X0LngIGIgjgQs6SRbxEny7AeCMJ6kp2nsXZAxuBMn1xhYnil2sh_PMnYYhoTxc3vEmK4zpjjLqRs5dZhZtuOUEplOxx4zCBeOyc7UEyQ2DhRTNj-I24PrGZf_cyF2b6-79Ue2_XrfrF-2GdkmZoUuyqY2zqg6b8oKfNKAeZUD1s7Xpa8AW7TYVlorcwBfFGCdAfStAWVzvRBPVywh4n4KNLhw2V__p_8AAxBreg</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Abdul-Rahim, A.I.</creator><creator>Marsh, C.D.</creator><creator>Nash, G.R.</creator><creator>Mitchell, M.</creator><creator>Booker, G.R.</creator><creator>Ashburn, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1999</creationdate><title>Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters</title><author>Abdul-Rahim, A.I. ; Marsh, C.D. ; Nash, G.R. ; Mitchell, M. ; Booker, G.R. ; Ashburn, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i89t-2324975a5071946cb324ce161ce7ab74b6cede8ed63305fcb22c8a5cebd5c0813</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Application specific processors</topic><topic>Bipolar transistors</topic><topic>Doping</topic><topic>Electric resistance</topic><topic>Electric variables</topic><topic>Geometry</topic><topic>Plugs</topic><topic>Silicon</topic><topic>Thermal degradation</topic><topic>Thermal resistance</topic><toplevel>online_resources</toplevel><creatorcontrib>Abdul-Rahim, A.I.</creatorcontrib><creatorcontrib>Marsh, C.D.</creatorcontrib><creatorcontrib>Nash, G.R.</creatorcontrib><creatorcontrib>Mitchell, M.</creatorcontrib><creatorcontrib>Booker, G.R.</creatorcontrib><creatorcontrib>Ashburn, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Abdul-Rahim, A.I.</au><au>Marsh, C.D.</au><au>Nash, G.R.</au><au>Mitchell, M.</au><au>Booker, G.R.</au><au>Ashburn, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters</atitle><btitle>ICM'99. 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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Application specific processors Bipolar transistors Doping Electric resistance Electric variables Geometry Plugs Silicon Thermal degradation Thermal resistance |
| title | Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters |
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