Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters

Improved electrical characteristics in deep submicron bipolar transistors with low thermal budget in-situ phosphorus doped single-crystal silicon emitters

The electrical characteristics of deep submicron bipolar transistors incorporating low thermal budget in-situ phosphorus doped single crystal silicon emitters are reported. This type of transistor exhibits a very ideal base current ideality factor and low emitter resistance. The use of in-situ phosp...

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Hauptverfasser: Abdul-Rahim, A.I., Marsh, C.D., Nash, G.R., Mitchell, M., Booker, G.R., Ashburn, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Application specific processors
Bipolar transistors
Doping
Electric resistance
Electric variables
Geometry
Plugs
Silicon
Thermal degradation
Thermal resistance
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Zusammenfassung:The electrical characteristics of deep submicron bipolar transistors incorporating low thermal budget in-situ phosphorus doped single crystal silicon emitters are reported. This type of transistor exhibits a very ideal base current ideality factor and low emitter resistance. The use of in-situ phosphorus doping is shown to eliminate the degradation of electrical characteristics seen in small geometry transistors due to emitter plug effects.
DOI:10.1109/ICM.2000.884852