High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization

A high Hall-effect mobility of 1,250 cm 2 V 1 s -1 is achieved in ZrS 2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS 2 film was obtained by sputtering and sulfurization. It was confirmed that a layered ZrS 2 film on a SiO 2 /Si substrate was successfully achieved by a high-temperature sputtering and sulfur compensation process. We demonstrated that the Hall-effect mobility and the carrier density were greatly improved to 1,250 cm 2 V -1 s -1 and 8.5×10 17 cm -3 , simultaneously. High-mobility two-dimensional ZrS 2 film is a strong candidate for advanced MISFETs.