Fully Symmetric 3-D Transformers With Through-Silicon via IPD Technology for RF Applications
This article presents the design, characterization, and modeling for the novel 3-D transformer structures based on the in-house developed 3-D integrated circuit (3-D IC) via-last backside-through-silicon via (TSV) interposer process. Differing from the conventional 2-D planar structure, the 3-D TSV...
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Veröffentlicht in: | IEEE transactions on components, packaging, and manufacturing technology (2011) packaging, and manufacturing technology (2011), 2019-11, Vol.9 (11), p.2143-2151 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This article presents the design, characterization, and modeling for the novel 3-D transformer structures based on the in-house developed 3-D integrated circuit (3-D IC) via-last backside-through-silicon via (TSV) interposer process. Differing from the conventional 2-D planar structure, the 3-D TSV design allows achieving a fully symmetric transformer with a compact size. The equivalent circuit model parameters are extracted based on the S-parameters to investigate the design tradeoff. With an inner diameter of 40 μm in the 3-D 1:1 transformer, the measured inductances of the primary and second coils are 439 and 482 pH with the Q factors of 4.59 and 5.11, respectively, and the coupling coefficient is 0.136. |
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ISSN: | 2156-3950 2156-3985 |
DOI: | 10.1109/TCPMT.2019.2943404 |