Integration strategies for smart power fast prototyping

This paper presents a novel NMOS-based switching cell architecture specially developed for semicustom smart power ICs that can be implemented even using low cost, standard CMOS technologies. This approach is highly suitable either for cost effective smart power ICs or for discrete high power devices...

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Hauptverfasser: Casimiro, A.P., Finco, S., Tavares, P., Behrens, F., Casto Simas, M.I.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:This paper presents a novel NMOS-based switching cell architecture specially developed for semicustom smart power ICs that can be implemented even using low cost, standard CMOS technologies. This approach is highly suitable either for cost effective smart power ICs or for discrete high power devices, since the NMOS transistor cell can be used to implement medium power switches or intermediate interface stages. This work also presents an overview on integration strategies and layout considerations, using different widely available processes of standard low cost CMOS technology, with no extra processing steps. Optimized NMOS devices were associated in special structures in a matrix arrangement, conveniently designed to be easily programmed using top metal masks, according to the required functionality, in order to implement topologies for commutation, drive, protection, amplification, sensing and control, capable to handle high voltage signals. The proposed power array allows the fast prototyping of a wide range of applications. As an example a therapeutic stimulation microsystem was obtained through the configuration of this power array fabricated using a standard CMOS technology. A boost converter was implemented as the actuator. Experimental results are presented and overall performance is discussed. These strategies can be extended to smart power and other power integration dedicated technologies, when customized ICs are in scope, to reduce low series production cost and production cycle.
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.2000.882590