A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz

A monolithic 2.5 V, 1 W silicon bipolar power amplifier with 55% PAE at 1.9 GHz

A monolithic RF power amplifier for 1.8-2 GHz has been realized in a 50 GHz-f/sub T/ Si bipolar technology and is operating down to supply voltages as low as 1.2 V. The balanced 2-stage power amplifier uses two on-chip transformers as input-balun and for interstage matching, with a high coupling coe...

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Bibliographische Detailangaben
Hauptverfasser: Simburger, W., Heinz, A., Wohlmuth, H.-D., Bock, J., Aufinger, K., Rest, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Batteries
Circuits
High power amplifiers
Impedance matching
Low voltage
Power amplifiers
Power generation
Radiofrequency amplifiers
Silicon
Transformers
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Beschreibung
Zusammenfassung:A monolithic RF power amplifier for 1.8-2 GHz has been realized in a 50 GHz-f/sub T/ Si bipolar technology and is operating down to supply voltages as low as 1.2 V. The balanced 2-stage power amplifier uses two on-chip transformers as input-balun and for interstage matching, with a high coupling coefficient of k=0.84. At 1.2 V, 2.5 V, and 3 V supply voltage an output power of 0.22 W, 1 W and 1.4 W is achieved, at a power added efficiency of 47%, 55% and 55%, respectively at 1.9 GHz. The small-signal gain is 28 dB.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2000.863314