Design and Investigation of Charge-Plasma-Based Work Function Engineered Dual-Metal-Heterogeneous Gate Si-Si0.55Ge0.45 GAA-Cylindrical NWTFET for Ambipolar Analysis

In this paper, we have proposed dopingless gate all around (GAA) nanowire tunnel field-effect transistor (NWTFET) made up of dual-material channel (DMaC). Charge-plasma (CP) technique is used to induce the doping concentration of charge carriers in the intrinsic semiconductor. GAA structure uses zir...

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Veröffentlicht in:	IEEE transactions on electron devices 2019-03, Vol.66 (3), p.1468-1474
Hauptverfasser:	Kumar, Naveen, Raman, Ashish
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Charge carriers Charge materials Charge-plasma (CP)-dopingless Current carriers Design engineering Doping dual metal (DM) dual-material channel (DMaC) Electric fields Field effect transistors gate all around (GAA)-heterogeneous gate (HG) Logic gates Metals Nanowires Plasma (physics) Semiconductor devices Si055Ge045 nanowire tunnel field-effect transistor (NWTFET) Silicon Silicon dioxide TFETs Tunneling Work functions Zirconium silicate
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