Design and Investigation of Charge-Plasma-Based Work Function Engineered Dual-Metal-Heterogeneous Gate Si-Si0.55Ge0.45 GAA-Cylindrical NWTFET for Ambipolar Analysis

In this paper, we have proposed dopingless gate all around (GAA) nanowire tunnel field-effect transistor (NWTFET) made up of dual-material channel (DMaC). Charge-plasma (CP) technique is used to induce the doping concentration of charge carriers in the intrinsic semiconductor. GAA structure uses zirconium silicate (IV) (ZrSiO 4 )/silicon dioxide (SiO 2 ) for heterogeneous gate (HG) structure metalized with two different gate metals. Auxiliary gate (GM1) and tunneling gate (GM2) have different work functions, i.e., \phi _{1} and \phi _{2} . The device physics is analyzed using electric field, charge carrier concentration, energy-band diagram, and tunneling rate across the structure. The effect of variation in \phi _{1} and \phi _{2} helps in the analysis of the ambipolar and analog behavior of the proposed device CP-dual metal-HG-DMaC-NWTFET. The reported ON-state current is 5.54~\mu \text{A}/\mu \text{m} , and the OFF-state current is approximately 0.1 aA/ \mu \text{m} . The proposed device showed negligible ambipolar current (10 −19 A/ \mu \text{m} ) as negative bias increases to V_{\mathbf {GS}} =-0.8 V making the device compatible for low-voltage applications.