Characterization of asymmetric coupled CMOS lines

Characterization of asymmetric coupled CMOS lines

This paper investigates the properties of asymmetric coupled lines built in a 0.25 /spl mu/m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted...

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Bibliographische Detailangaben
Hauptverfasser: Arz, U., Williams, D.F., Walker, D.K., Rogers, J.E., Rudack, M., Treytnar, D., Grabinski, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Calibration
CMOS technology
Contacts
Frequency
Impedance
Laboratories
NIST
Probes
Silicon
Testing
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Beschreibung
Zusammenfassung:This paper investigates the properties of asymmetric coupled lines built in a 0.25 /spl mu/m CMOS technology in the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port S-parameter measurements agree well with data predicted by numerical calculations. To our knowledge these are the first complete high-frequency measurements of the line parameters for asymmetric coupled lines on silicon ever reported.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2000.863258