Si/SiGe HBT active integrated antenna on high resistivity silicon substrate

Si/SiGe HBT active integrated antenna on high resistivity silicon substrate

The first active integrated K-band antenna on a high resistivity silicon substrate employing Si/SiGe HBTs is presented. Microstrip structures represent the resonating and radiating circuits. Large and small signal modeling was performed to compare the different methods. Several antennas were built a...

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Hauptverfasser: Kaleja, M.M., Grubl, A., Sinnesbichler, F.X., Olbrich, G.R., Strohm, K.M., Luy, J.-F., Biebl, E.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Conductivity
Fabrication
Germanium silicon alloys
Heterojunction bipolar transistors
Millimeter wave technology
Millimeter wave transistors
Power system modeling
Radio frequency
Silicon germanium
Temperature
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Beschreibung
Zusammenfassung:The first active integrated K-band antenna on a high resistivity silicon substrate employing Si/SiGe HBTs is presented. Microstrip structures represent the resonating and radiating circuits. Large and small signal modeling was performed to compare the different methods. Several antennas were built and characterized to show the feasibility of this novel approach.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2000.862353