FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2

High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2 ) layer are fabricated based on a conventional high- {\kappa } metal gate FinFETs fabrication flow. The devices show improved subthreshold swing values [34.5 mV/dec for 500-nm gate length (L G ) and 53 mV/dec for 20-nm-L G devices] and slight hysteresis voltages (~9 mV for \textsf {L}_{\textsf {G}} = \textsf {500} nm and ~40 mV for \textsf {L}_{\textsf {G}} = \textsf {20} -nm transistors). With the integrated FE film, a strong driving current enhancement (up to 260%) is also obtained compared with that of conventional FinFETs. The inherent reasons for the improved characteristics contribute to the low-interface state density ( {D}_{\sf it} ) and the perfect channel electrostatic integrity.