Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]

Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]

The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major prob...

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Hauptverfasser: Jaafar Ali, M.N., Bhuva, B., Kerns, S., Maher, M., Lawrence, R., Hoffmann, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit optimization
CMOS process
Dielectrics and electrical insulation
Electric resistance
Fabrication
Logic circuits
MOS devices
Thickness measurement
Transconductance
Voltage
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creator Jaafar Ali, M.N.
Bhuva, B.
Kerns, S.
Maher, M.
Lawrence, R.
Hoffmann, A.
description The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies.
doi_str_mv 10.1109/RADECS.1999.858635
format Conference Proceeding
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identifier ISBN: 9780780357266
ispartof 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471), 1999, p.519-523
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language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Circuit optimization
CMOS process
Dielectrics and electrical insulation
Electric resistance
Fabrication
Logic circuits
MOS devices
Thickness measurement
Transconductance
Voltage
title Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]
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