Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]

Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]

The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major prob...

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Bibliographische Detailangaben
Hauptverfasser: Jaafar Ali, M.N., Bhuva, B., Kerns, S., Maher, M., Lawrence, R., Hoffmann, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit optimization
CMOS process
Dielectrics and electrical insulation
Electric resistance
Fabrication
Logic circuits
MOS devices
Thickness measurement
Transconductance
Voltage
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Beschreibung
Zusammenfassung:The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies.
DOI:10.1109/RADECS.1999.858635