A high accuracy-low complexity model for CMOS delays

This paper presents a new model for CMOS structures delays estimation based on a deep analysis of complex gates behavior. This approach can supply a high level of accuracy. A complex structure is reduced first to series-connected MOS, then the delay equations are applied to that reduced rate. The model is based on a time piecewise linearization so that a strongly nonlinear circuit can he solved using well known linear techniques. The delay formulas involve model parameters as MOS width functions, therefore providing routines suitable for optimization algorithms. The high level of accuracy, the low CPU time and the high degree of scaling capability are proved in the paper. These features make the model attractive for deep submicron technologies.