Cleaning process strategies compatible with low-k dielectric and copper: state of the art, evolution and perspectives

Cleaning process strategies compatible with low-k dielectric and copper: state of the art, evolution and perspectives

This work presents an analysis of interconnect cleaning for low-k/copper integration. Analytical and electrical data are combined to understand the mechanisms and efficacy of various available cleaning chemistries in the presence of Cu and organic, Si-based, and hybrid dielectrics.

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Bibliographische Detailangaben
Hauptverfasser: Louis, D., Beverina, A., Arvet, C., Lajoinie, E., Peyne, C., Holmes, D., Maloney, D., Lee, S., Lee, W.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemistry
Cleaning
Copper
Data analysis
Dielectrics
Dry etching
Microelectronics
Surface contamination
Telecommunications
Wet etching
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Beschreibung
Zusammenfassung:This work presents an analysis of interconnect cleaning for low-k/copper integration. Analytical and electrical data are combined to understand the mechanisms and efficacy of various available cleaning chemistries in the presence of Cu and organic, Si-based, and hybrid dielectrics.
DOI:10.1109/IITC.2000.854339