Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth
State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-μm size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter d...
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| Veröffentlicht in: | IEEE photonics technology letters 2000-07, Vol.12 (7), p.786-788 |
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| container_end_page | 788 |
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| container_issue | 7 |
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| container_title | IEEE photonics technology letters |
| container_volume | 12 |
| creator | Guina, M. Orsila, S. Dumitrescu, M. Saarinen, M. Sipila, P. Vilokkinen, V. Roycroft, B. Uusimaa, P. Toivonen, M. Pessa, M. |
| description | State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-μm size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias. An open eye-diagram at 622 Mb/s achieved for the 84-μm device makes it very attractive for SONET OC-12 data communication links. |
| doi_str_mv | 10.1109/68.853500 |
| format | Article |
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An open eye-diagram at 622 Mb/s achieved for the 84-μm device makes it very attractive for SONET OC-12 data communication links.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/68.853500</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Bias ; Costs ; Data communication ; Devices ; Emittance ; Holes ; Light emitting diodes ; Modulation ; Optical coupling ; Optical fibers ; Optical modulation ; Resonance ; Semiconductor diodes ; State of the art ; Transfer functions</subject><ispartof>IEEE photonics technology letters, 2000-07, Vol.12 (7), p.786-788</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2000</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c337t-24e6f4f5f2f7c7fe8dc22e0ba16765fa500641f3625faa8afed26926ea0549df3</citedby><cites>FETCH-LOGICAL-c337t-24e6f4f5f2f7c7fe8dc22e0ba16765fa500641f3625faa8afed26926ea0549df3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/853500$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/853500$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Guina, M.</creatorcontrib><creatorcontrib>Orsila, S.</creatorcontrib><creatorcontrib>Dumitrescu, M.</creatorcontrib><creatorcontrib>Saarinen, M.</creatorcontrib><creatorcontrib>Sipila, P.</creatorcontrib><creatorcontrib>Vilokkinen, V.</creatorcontrib><creatorcontrib>Roycroft, B.</creatorcontrib><creatorcontrib>Uusimaa, P.</creatorcontrib><creatorcontrib>Toivonen, M.</creatorcontrib><creatorcontrib>Pessa, M.</creatorcontrib><title>Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-μm size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias. An open eye-diagram at 622 Mb/s achieved for the 84-μm device makes it very attractive for SONET OC-12 data communication links.</description><subject>Bandwidth</subject><subject>Bias</subject><subject>Costs</subject><subject>Data communication</subject><subject>Devices</subject><subject>Emittance</subject><subject>Holes</subject><subject>Light emitting diodes</subject><subject>Modulation</subject><subject>Optical coupling</subject><subject>Optical fibers</subject><subject>Optical modulation</subject><subject>Resonance</subject><subject>Semiconductor diodes</subject><subject>State of the art</subject><subject>Transfer functions</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90U1LAzEQBuBFFKzVg1dPwYPoYevkY5PsUYpaoeJFvS7pJmlT9qNushT99aZs6cGDp3mHeRgYJkkuMUwwhvyey4nMaAZwlIxwznAKWLDjmCFmjGl2mpx5vwbALKNslHzO3XIVUlO7EFyzRNq12qBDqwLiGaCmRlsXVogApK-zH-RrVVWpd8tGVahudV-p4NoGLVSjt06H1XlyYlXlzcW-jpOPp8f36Sydvz2_TB_maUmpCClhhltmM0usKIU1UpeEGFgozAXPrIp3cIYt5SQ2SiprNOE54UZBxnJt6Ti5GfZuuvarNz4UtfOlqSrVmLb3BZGUiRwgwtt_IQZCZE6AiUiv_9B123fxUl9IyXIhKNmhuwGVXet9Z2yx6Vytuu-4qdh9ouCyGD4R7dVgnTHm4PbDX9lFgU0</recordid><startdate>20000701</startdate><enddate>20000701</enddate><creator>Guina, M.</creator><creator>Orsila, S.</creator><creator>Dumitrescu, M.</creator><creator>Saarinen, M.</creator><creator>Sipila, P.</creator><creator>Vilokkinen, V.</creator><creator>Roycroft, B.</creator><creator>Uusimaa, P.</creator><creator>Toivonen, M.</creator><creator>Pessa, M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20000701</creationdate><title>Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth</title><author>Guina, M. ; Orsila, S. ; Dumitrescu, M. ; Saarinen, M. ; Sipila, P. ; Vilokkinen, V. ; Roycroft, B. ; Uusimaa, P. ; Toivonen, M. ; Pessa, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c337t-24e6f4f5f2f7c7fe8dc22e0ba16765fa500641f3625faa8afed26926ea0549df3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Bandwidth</topic><topic>Bias</topic><topic>Costs</topic><topic>Data communication</topic><topic>Devices</topic><topic>Emittance</topic><topic>Holes</topic><topic>Light emitting diodes</topic><topic>Modulation</topic><topic>Optical coupling</topic><topic>Optical fibers</topic><topic>Optical modulation</topic><topic>Resonance</topic><topic>Semiconductor diodes</topic><topic>State of the art</topic><topic>Transfer functions</topic><toplevel>online_resources</toplevel><creatorcontrib>Guina, M.</creatorcontrib><creatorcontrib>Orsila, S.</creatorcontrib><creatorcontrib>Dumitrescu, M.</creatorcontrib><creatorcontrib>Saarinen, M.</creatorcontrib><creatorcontrib>Sipila, P.</creatorcontrib><creatorcontrib>Vilokkinen, V.</creatorcontrib><creatorcontrib>Roycroft, B.</creatorcontrib><creatorcontrib>Uusimaa, P.</creatorcontrib><creatorcontrib>Toivonen, M.</creatorcontrib><creatorcontrib>Pessa, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Guina, M.</au><au>Orsila, S.</au><au>Dumitrescu, M.</au><au>Saarinen, M.</au><au>Sipila, P.</au><au>Vilokkinen, V.</au><au>Roycroft, B.</au><au>Uusimaa, P.</au><au>Toivonen, M.</au><au>Pessa, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2000-07-01</date><risdate>2000</risdate><volume>12</volume><issue>7</issue><spage>786</spage><epage>788</epage><pages>786-788</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-μm size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias. An open eye-diagram at 622 Mb/s achieved for the 84-μm device makes it very attractive for SONET OC-12 data communication links.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/68.853500</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE photonics technology letters, 2000-07, Vol.12 (7), p.786-788 |
| issn | 1041-1135 1941-0174 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Bandwidth Bias Costs Data communication Devices Emittance Holes Light emitting diodes Modulation Optical coupling Optical fibers Optical modulation Resonance Semiconductor diodes State of the art Transfer functions |
| title | Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth |
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